IXTH500N04T2
IXTT500N04T2
70
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
60
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
60
R G = 1 ? , V GS = 10V
V DS = 20V
50
R G = 1 ? , V GS = 10V
V DS = 20V
100A < I D < 200A
50
40
T J = 125oC
40
30
30
20
20
10
0
10
0
T J = 25oC
25
35
45
55
65
75
85
95
105
115
125
40
60
80
100
120
140
160
180
200
T J - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
I D - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
600
140
160
130
500
t r t d(on) - - - -
T J = 125oC, V GS = 10V
120
140
t f t d(off) - - - -
R G = 1 ? , V GS = 10V
120
400
300
200
100
0
V DS = 20V
I D = 200A
I D = 100A
100
80
60
40
20
120
100
80
60
40
20
0
V DS = 20V
I D = 100A
I D = 200A
110
100
90
80
70
60
50
1
2
3
4
5
6
7
8
9
10
25
35
45
55
65
75
85
95
105
115
125
R G - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
T J - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
90
t f
t d(off) - - - -
120
500
t f
t d(off) - - - -
500
80
T J = 125oC
R G = 1 ? , V GS = 10V
V DS = 20V
110
400
T J = 125oC, V GS = 10V
V DS = 20V
I D = 200A, 100A
400
70
100
300
300
60
90
200
200
50
T J = 25oC
80
40
30
70
60
100
0
100
0
40
60
80
100
120
140
160
180
200
1
2
3
4
5
6
7
8
9
10
I D - Amperes
? 2009 IXYS CORPORATION, All Rights Reserved
R G - Ohms
相关PDF资料
IXTH50N20 MOSFET N-CH 200V 50A TO-247AD
IXTH52P10P MOSFET P-CH 100V 52A TO-247
IXTH5N100A MOSFET N-CH 1000V 5A TO247AD
IXTH60N10 MOSFET N-CH 100V 60A TO-247
IXTH60N15 MOSFET N-CH 150V 60A TO-247
IXTH60N25 MOSFET N-CH 250V 60A TO-247
IXTH6N100D2 MOSFET N-CH 1000V 6A TO247
IXTH6N120 MOSFET N-CH 1200V 6A TO-247AD
相关代理商/技术参数
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